maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 20 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 3.0 v continuous collector current i c 50 ma power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance jc 357 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =10v 100 na i ebo v eb =2.0v 100 na bv cbo i c =10a 20 v bv ceo i c =1.0ma 20 v bv ebo i e =10a 3.0 v v ce(sat) i c =5.0ma, i b =0.5ma 0.5 v v be(on) v ce =10v, i c =5.0ma 0.9 v h fe v ce =10v, i c =5.0ma 60 f t v ce =10v, i c =5.0ma, f=100mhz 600 mhz c ob v cb =10v, i e =0, f=1.0mhz 0.85 pf c ib v cb =10v, i b =0, f=1.0mhz 0.65 pf MPSH81 pnp silicon rf transistor to-92 case central semiconductor corp. tm r0 (25-april 2008) description: the central semiconductor MPSH81 is a pnp silicon transistor designed for general purpose rf amplifier applications. marking: full part number www.datasheet.co.kr datasheet pdf - http://www..net/
central semiconductor corp. tm to-92 case - mechanical outline MPSH81 pnp silicon rf transistor r0 (25-april 2008) lead code: 1) base 2) emitter 3) collector marking: full part number www.datasheet.co.kr datasheet pdf - http://www..net/
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